Natural patterning of templates on GaAs by formation of cracks-Reference-Cited by-同舟云学术

Natural patterning of templates on GaAs by formation of cracks

Published:2015-06 Issue:6 Volume:5 Page:067146
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Song Yuxin¹^ORCID,Xu Hao¹,Li Yaoyao¹,Sadeghi Mahdad²,Wang Shumin¹²

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China

2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden

Funder

National Natural Science Foundation of China (NSFC)

Chinese Academy of Sciences (CAS)

Science and Technology Commission of Shanghai Municipality (Shanghai Municipal Science and Technology Commission)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4922961.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922961&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference18 articles.

1. Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

2. A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

3. Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

4. Equilibrium strain and dislocation density in exponentially graded Si1−xGex/Si (001)

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