Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4904086
Reference54 articles.
1. 500 nm electrically driven InGaN based laser diodes
2. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
5. AlGaN/GaN HEMTs-an overview of device operation and applications
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