Optical transitions of neutral Mg in Mg-doped β-Ga2O3
Author:
Affiliation:
1. Department of Physics, University of Alabama at Birmingham, 1300 University Blvd., Birmingham, Alabama 35233, USA
2. Center for Computational Materials Science, U.S. Naval Research Laboratory, Washington, DC 20375, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0081925
Reference38 articles.
1. A review of Ga2O3materials, processing, and devices
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4. Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3Layers Grown by MOVPE on (010)-Oriented Substrates
5. Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides
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