Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359407
Reference10 articles.
1. Gallium antimonide device related properties
2. Effects of passivating ionic films on the photoluminescence properties of GaAs
3. Near‐ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth
4. Electronic properties of sulfur adsorbed on cleaved GaAs surfaces
5. Electrical properties of GaSb Schottky diodes and p-n junctions
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