Growth and modeling of highly doped, thin‐layer silicon‐modulation‐doped superlattices by intermittent solid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339344
Reference18 articles.
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Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Experimental studies on the NDR of Si1−xGex/Si triple barrier resonant tunneling diodes;Solid-State Electronics;1992-05
2. Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double‐barrier structures;Applied Physics Letters;1991-06-03
3. Solid phase epitaxial growth of Si on SiSb surface phases for the formation of δ-doped layers and δiδi-superlattices;Surface Science;1990-05
4. Modulation-doped superlattices with delat layers in silicon;Thin Solid Films;1990-01
5. Chapter 4 Group-IV Compounds;Strained-Layer Superlattices: Materials Science and Technology;1990
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