Experimental studies on the NDR of Si1−xGex/Si triple barrier resonant tunneling diodes-Reference-Cited by-同舟云学术

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Experimental studies on the NDR of Si1−xGex/Si triple barrier resonant tunneling diodes

Published:1992-05 Issue:5 Volume:35 Page:611-614
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Xu D.X.,Shen G.D.,Willander M.,Schäffler F.,Luy J.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Resonant tunneling in semiconductor double barriers

2. Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

3. Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode

4. Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications

5. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy;Applied Physics Letters;2024-02-26

2. Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission;Japanese Journal of Applied Physics;2020-07-27

3. Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers;Applied Physics Express;2011-01-27

4. Bibliography;Silicon-Germanium Strained Layers and Heterostructures;2003

5. Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1−xGex/Si triple barrier diodes;Applied Physics Letters;2001-10

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