Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double‐barrier structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104856
Reference12 articles.
1. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
2. InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devices
3. Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
4. Temperature effects for current transport in resonant tunneling structures
5. Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructures
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