Anomalous capacitance–voltage profiles in quantum wells explained by a quantum mechanical model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364061
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3. Conduction-band offsets in pseudomorphicInxGa1−xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy
4. Variational calculations of subbands in a quantum well with uniform electric field: Gram–Schmidt orthogonalization approach
5. Variational calculations on a quantum well in an electric field
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1. Unusual changes observed in the photoluminescence of annealed InxGa1−xN/GaN quantum wells explained;Materials Letters;2007-12
2. Effect of polarization on two-dimensional carrier distribution in nitride quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2005-01
3. Band offset of quantum wells computed from charge measurements;physica status solidi (b);2003-03
4. Integration of quantum transport models in classical device simulators;Solid-State Electronics;2000-05
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