Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy

Published:2011-06-13 Issue:24 Volume:98 Page:242110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Douglas E. A.,Scheurmann A.,Davies R. P.,Gila B. P.,Cho Hyun,Craciun V.,Lambers E. S.,Pearton S. J.,Ren F.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3600340

Reference23 articles.

1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

2. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

3. Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers

4. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

5. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

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1. Recent Developments of Flexible InGaZnO Thin‐Film Transistors;physica status solidi (a);2021-02-17

2. The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress;IEEE Electron Device Letters;2020-05

3. Multi-valued charge trapping memory based on amorphous-indium-gallium-zinc oxide thin film transistor with designed Ga 2 O 3 /Al 2 O 3 stack insulator;Engineering Research Express;2019-11-04

4. Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states;Journal of Materials Science: Materials in Electronics;2018-10-08

5. Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy;ACS Applied Materials & Interfaces;2018-01-18

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