Multi-valued charge trapping memory based on amorphous-indium-gallium-zinc oxide thin film transistor with designed Ga 2 O 3 /Al 2 O 3 stack insulator-Reference-Cited by-同舟云学术

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Multi-valued charge trapping memory based on amorphous-indium-gallium-zinc oxide thin film transistor with designed Ga 2 O 3 /Al 2 O 3 stack insulator

Published:2019-11-04 Issue:2 Volume:1 Page:025025
ISSN:2631-8695
Container-title:Engineering Research Express
language:
Short-container-title:Eng. Res. Express

Author:

Li Ya,Wang Xinzhong,Pei Yanli^ORCID

Funder

the Science and Technology Project of Guangdong Province, China

the Natural Science Foundation of China

the Natural Science Foundation of Guangdong Province, China

Pengcheng Scholar funding of Shenzhen

Basic Research Plan Program of Shenzhen City in 2016

Innovation and Strong School

Publisher

IOP Publishing

Subject

General Engineering

Link

https://iopscience.iop.org/article/10.1088/2631-8695/ab5024/pdf

Reference18 articles.

1. Application of amorphous oxide TFT to electrophoretic display

2. Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

3. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

4. Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

5. Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

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1. Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer;ECS Journal of Solid State Science and Technology;2021-12-01

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