Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359573
Reference10 articles.
1. SiGe Heterojunctions Transistors and Optoelectronic Devices
2. Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon
3. Silicon germanium optical waveguides with 0-5 dB/cm losses for singlemode fibre optic systems
4. Characterization of GeSi/Si Heteroepitaxial Layered Structures by Convergent Beam Electron Diffraction
5. Wavelength dependent propagation loss characteristics of SiGe/Si planar waveguides
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1. A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium;Materials Science and Engineering: B;2001-04
2. Erbium-doped Si1-xGex/Si structures for light emitting diodes;Semiconductor Science and Technology;2000-02-01
3. High-confinement SiGe low-loss waveguides for Si-based optoelectronics;Applied Physics Letters;1999-09-06
4. Analysis of high-confinement SiGe/Si waveguides for silicon-based optoelectronics;Journal of the Optical Society of America A;1999-03-01
5. Erbium in silicon–germanium quantum wells;Journal of Luminescence;1998-12
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