Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2828161
Reference29 articles.
1. Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate
2. InGaN Single-Quantum-Well LEDs
3. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
4. Piezoelectric charge densities in AlGaN/GaN HFETs
5. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
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