Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4774091
Reference22 articles.
1. Auger recombination in InGaN measured by photoluminescence
2. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
3. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
4. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
5. Origin of efficiency droop in GaN-based light-emitting diodes
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2. Efficiency enhancement of GaN based light-emitting diodes with an n-i-p type last quantum barrier;24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics;2020-12-02
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