Characterization of refractory W, WNx, and WSixfilms on GaAs using thermoreflectance measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342948
Reference10 articles.
1. Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves
2. Use Of Thermal Waves To Measure Dose And Uniformity Of Si + And Be + Implants Into GaAs
3. Thin‐film thickness measurements with thermal waves
4. Thermal-wave detection and thin-film thickness measurements with laser beam deflection
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of WNx metallization prepared by ion implantation of nitrogen;Thin Solid Films;1994-09
2. Characterization of ion beam deposited refractory WNx films on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-09
3. Properties of WNxfilms and WNx/GaAs Schottky diodes prepared by ion beam assisted deposition technique;Journal of Applied Physics;1990-01-15
4. Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal;Applied Physics Letters;1989-09-25
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