Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal-Reference-Cited by-同舟云学术

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Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal

Published:1989-09-25 Issue:13 Volume:55 Page:1315-1317
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hara Tohru,Takahashi Shuya,Hagiwara Hiroyuki,Hiyoshi Jun,Smith W. Lee,Welles C.,Hahn S. K.,Larson L.,Wong C. C. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102473

Reference8 articles.

1. Ion implant monitoring with thermal wave technology

2. Thermal-wave measurements and monitoring of TaSix silicide film properties

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of mechanical damage on structural and electrical properties of silicon wafers;Solid-State Electronics;1999-11

2. Modulated photoreflectance characterization of ion-implanted semiconductor wafers;Applied Physics A Solids and Surfaces;1994-05

3. Defect engineering of p+-junctions by multiple-species ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

4. Damage depth profiles for high energy ion implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

5. Defect engineering of p+-junctions by multiple-species ion implantation;Ion Implantation Technology–92;1993

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