Characterization of ion beam deposited refractory WNx films on GaAs-Reference-Cited by-同舟云学术

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Characterization of ion beam deposited refractory WNx films on GaAs

Published:1990-09 Issue:5 Volume:8 Page:1117
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee J. S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor;Journal of The Electrochemical Society;2011

2. Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-source Precursor;ECS Transactions;2009-09-25

3. Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip): Deposition, characterization, and diffusion barrier evaluation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-07

4. Effect of NH[sub 3] on Film Properties of MOCVD Tungsten Nitride from Cl[sub 4](CH[sub 3]CN)W(N[sup i]Pr);Journal of The Electrochemical Society;2004

5. Study of the phase transition and the thermal nitridation of nanocrystalline sol–gel titania films;Journal of Non-Crystalline Solids;2002-01

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