Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-source Precursor
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Published:2009-09-25
Issue:8
Volume:25
Page:541-548
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Kim Dojun,Kim Oh Hyun,Ajmera Hiral,Anderson Timothy J.,Koller Jürgen,McElwee-White Lisa
Abstract
The tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip) (1) was used as a single-source precursor for growth of tungsten carbonitride (WNxCy) by metal-organic chemical vapor deposition (CVD) in H2 carrier. Multiple spectroscopic techniques were used for preliminary evaluation of the suitability of 1 as a precursor and to suggest possible fragmentation pathways. The effect of growth temperature on film microstructure, lattice parameter, average grain size, chemical composition, chemical bonding states, growth rate, film resistivity, and sheet resistance was studied.
Publisher
The Electrochemical Society