Structural study of refractory-metal-free C40 TiSi2 and its transformation to C54 TiSi2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1466521
Reference15 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
3. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
4. Phase formation in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on (111)Si
5. Microstructural aspects and mechanism of theC49‐to‐C54 polymorphic transformation in titanium disilicide
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