Phase formation in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on (111)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350441
Reference38 articles.
1. Development of the self-aligned titanium silicide process for VLSI applications
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3. Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation
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5. Chemical and structural aspects of reaction at the Ti/Si interface
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