Vertically stacking self-assembled quantum wires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1497993
Reference15 articles.
1. In SituInterface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
2. Growth of InAs/InP and InAsP/InP heterostructures by chemical beam epitaxy
3. Roughness at the interface of thin InP/InAs quantum wells
4. Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy
5. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
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1. Pressure-induced interband optical transitions in an InAs0.8P0.2/InP quantum wire;Phase Transitions;2015-06-22
2. Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 μm;Journal of Applied Physics;2011-11-15
3. Interlevel Cascade Transition in Electrically Confined Quantum Wire Arrays;ACS Nano;2011-08-25
4. Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots;Nanotechnology;2008-10-30
5. Epitaxial Semiconductor Quantum Wires;Journal of Nanoscience and Nanotechnology;2008-07-01
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