Growth of InAs/InP and InAsP/InP heterostructures by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine
2. Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP Heterostructures
3. Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy
4. InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers
5. Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−x
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