Si dopant migration and the AlGaAs/GaAs inverted interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104915
Reference10 articles.
1. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
2. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
3. Realization of high mobilities at ultralow electron density in GaAs‐Al0.3Ga0.7As inverted heterojunctions
4. Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106cm2/V s
5. High‐mobility variable‐density two‐dimensional electron gas in inverted GaAs‐AlGaAs heterojunctions
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