Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films-Reference-Cited by-同舟云学术

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Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

Published:2008-08-11 Issue:6 Volume:93 Page:062903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jinesh K. B.,Besling W. F. A.,Tois E.,Klootwijk J. H.,Wolters R.,Dekkers W.,Kaiser M.,Bakker F.,Tuominen M.,Roozeboom F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2971032

Reference11 articles.

1. Pushing the Limits

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

4. Suppression of Leakage Current and Moisture Absorption of La2O3Films with Ultraviolet Ozone Post Treatment

5. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

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2. Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors;Chemical Vapor Deposition;2014-07-20

3. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

4. Scanning microwave microscopy and scanning capacitance microscopy on colloidal nanocrystals;Journal of Applied Physics;2011-03-15

5. Atomic layer deposition of high capacitance density Ta2O5–ZrO2 based dielectrics for metal–insulator–metal structures;Microelectronic Engineering;2010-02

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