Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110537
Reference8 articles.
1. Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces
2. The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs
3. Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems
4. Novel reflectance modulator employing an InGaAs/AlGaAs strained‐layer superlattice Fabry–Perot cavity with unstrained InGaAs/InAlAs mirrors
5. Defects associated with the accommodation of misfit between crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation energies and equilibrium configurations of dislocation arrays with alternating Burgers vectors in layered heterostructures;Journal of Crystal Growth;2010-06
2. Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As/InP heterostructure;Applied Physics Letters;1998-01-19
3. Reduction of Threading Dislocation Density in an(InAs)1(GaAs)1Strained Short-Period Superlattice by Atomic Hydrogen Irradiation;Japanese Journal of Applied Physics;1996-05-15
4. Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness;MRS Proceedings;1995
5. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions;Applied Physics Letters;1994-08
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