Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As/InP heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120721
Reference10 articles.
1. Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing
2. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
3. Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperatures
4. Comparison of device performance of highly strained Ga1−xInxAs/a10.48In0.52As (0.53 ≤ × ≤ 0.90) MODFETs
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1. Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors;Defect and Diffusion Forum;2000-08
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