Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2775834
Reference14 articles.
1. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
2. Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphire
3. UWB multiple access performance in synchronous and asynchronous networks
4. Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors
5. Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs
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