Electron‐beam evaporated phosphosilicate glass encapsulant for post‐implant annealing of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341334
Reference12 articles.
1. Study of Encapsulants for Annealing Si‐Implanted GaAs
2. AlN capped annealing of Si implanted semi‐insulating GaAs
3. OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
4. Study of Encapsulants for Annealing GaAs
5. XPS Study of Annealed SiO2 / GaAs Interfaces
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
2. Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer;Journal of Applied Physics;1997-03
3. Impurity Free Vacancy Disordering Using Phosphorus Doped SiO2 and Pure SiO2 Caps;MRS Proceedings;1996
4. An e-beam evaporated borosilicate glass thin film as an encapsulant for annealing Be-implant InP;Materials Chemistry and Physics;1994-11
5. Co-implantation of Mg and Si in GaAs MESFETs;Solid-State Electronics;1993-03
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