Co-implantation of Mg and Si in GaAs MESFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Ultimate scaling limits for high-frequency GaAs MESFETs
2. Ion implantation into gallium arsenide
3. Ion implantation of Boron in GaAs MESFET's
4. Improved GaAs power FET Performance using Be Co-implantation
5. GaAs MESFETs with a buried p-layer for large-scale integration
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-implantation technology for improved GaAs MESFETs performance;Journal of Materials Science: Materials in Electronics;2004-02
2. CO-implantation of Si and Be in SI GaAs for improved device performance;Solid-State Electronics;1998-11
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