Ion implantation into gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341475
Reference21 articles.
1. Planar and residual channeling of Si+ implants in GaAs
2. Channeling of ions near the silicon 〈001〉 axis
3. Channeling effect for low energy ion implantation in Si
4. GaAs MESFET device dependences on ion-implant tilt and rotation angles
5. Planar channeling effects in Si(100)
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