Photoemission investigation of the room‐temperature adsorption of trimethylgallium on GaAs surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100866
Reference4 articles.
1. Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine
2. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
3. DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH3
4. Comparison of site-specific densities of states of Ga and As in cleaved and sputtered GaAs(110) by means of Auger line shapes
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Decomposition of triethylindium (TEI) on GaP(001) surface studied by TPD, XPS and RHEED;Applied Surface Science;1996-07
2. Electron-stimulated dissociation of ammonia on Pt(111): observation of gas-phase atomic hydrogen;Surface Science;1995-10
3. X-ray and ultraviolet photoelectron spectroscopic study of 58.4 and 193 nm photodissociation of organometallic compounds adsorbed on substrates;Applied Surface Science;1994-05
4. Adsorption and decomposition of triethylindium on GaP(001) studied by x-ray and ultra-violet photoelectron spectroscopy;Applied Surface Science;1994-01
5. Photodissociation of Trimethylindium and Trimethylgallium on GaAs at 193 nm Studied by Angle-Resolved Photoelectron Spectroscopy;Japanese Journal of Applied Physics;1993-06-30
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