Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3511449
Reference20 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. High mobility diamonds and particle detectors
3. The effect of boron doping on the lattice parameter of homoepitaxial diamond films
4. Optical and electronic properties of heavily boron-doped homo-epitaxial diamond
5. High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition
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