The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes-Reference-Cited by-同舟云学术

The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes

Published:2013-11-07 Issue:17 Volume:114 Page:173107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Feng A. L.,Li G.,He G.,Sun Z. Q.,Hu W. D.,Chen X. S.,Yin F.,Zhang B.,Lu W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4829452

Reference31 articles.

1. Third-generation infrared photodetector arrays

2. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

3. Estimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot

4. Study of Schottky contact in HgCdTe infrared photovoltaic detectors

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