Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope-Reference-Cited by-同舟云学术

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

Published:2014-11-10 Issue:19 Volume:105 Page:191106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Qiu Weicheng¹²,Hu Weida²,Lin Tie²,Cheng Xiang'ai¹,Wang Rui¹,Yin Fei²,Zhang Bo²,Chen Xiaoshuang²,Lu Wei²

Affiliation:

1. College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073, China

2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Funder

Fund of Shanghai Science and Technology Foundation

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901529

Reference35 articles.

1. Plasmon-based photosensors comprising a very thin semiconducting region

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4. A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe

5. Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

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