Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101751
Reference17 articles.
1. The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially‐grown Sn‐doped AlxGa1−xAs
2. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
3. Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
4. Reflection high-energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs
5. Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
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1. The two-dimensional lateral injection in-plane laser;IEEE Journal of Quantum Electronics;1999-03
2. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03
3. Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells;Physical Review B;1996-07-15
4. Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1992-11
5. Metastable energy distribution and localization of spatially indirect excitons;Physical Review B;1992-04-15
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