Reduction of native oxides on GaAs during atomic layer growth of Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3148723
Reference12 articles.
1. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
2. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
3. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition
4. The advanced unified defect model for Schottky barrier formation
5. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)
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