Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing-Reference-Cited by-同舟云学术

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Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing

Published:1996-10-21 Issue:17 Volume:69 Page:2578-2580
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tchikatilov D.,Yang Y. F.,Yang E. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117705

Reference14 articles.

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide;Japanese Journal of Applied Physics;2009-08-20

2. Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates;The Journal of Chemical Physics;2009-05-28

3. Low-temperature oxidation of SiGe by liquid-phase deposition;Applied Surface Science;2008-07

4. High-k gate oxide for silicon heterostructure MOSFET devices;Journal of Materials Science: Materials in Electronics;2006-09

5. Junction Surface Treatment for High-Breakdown-Voltage SiGe∕Si Diodes;Electrochemical and Solid-State Letters;2006

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