Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy-Reference-Cited by-同舟云学术

Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy

Published:2010-06-15 Issue:12 Volume:107 Page:124510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Inamoto S.,Yamasaki J.,Okunishi E.,Kakushima K.,Iwai H.,Tanaka N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3445874

Reference49 articles.

1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Preparation and Properties of Ta2 O 5 Films by LPCVD for ULSI Application

4. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

5. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics;Journal of Vacuum Science & Technology B;2023-11-02

2. Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices;Nanomaterials;2021-08-20

3. Effects of thermal annealing on the interface between tungsten and CeO 2 /La 2 O 3 stack gate dielectrics;Vacuum;2017-06

4. XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics;Thin Solid Films;2016-02

5. Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics;Vacuum;2015-08