Author:
Zhang Jieqiong,Wong Hei,Kakushima Kuniyuki,Iwai Hiroshi
Funder
Council of Hong Kong, Hong Kong
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference31 articles.
1. Nano-CMOS Gate Dielectric Engineering;Wong,2012
2. On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology;Wong;Microelectron. Eng.,2015
3. Gate stack high-κ materials for Si-based MOSFETs past, present, and futures;Mohsenifar;Microelectron. Solid State Electron.,2015
4. High-k materials and metal gates for CMOS applications;Robertson;Mater. Sci. Eng. R Rep.,2015
5. Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics;Kakushima;Microelectron. Reliab,2010
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献