Epitaxial growth and structural analysis of AlN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2819616
Reference18 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
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3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
4. D. K. Gaskill, L. B. Rowland, and K. Doverspike, inProperties of Group III Nitrides, edited by J. H. Edgar (INSPEC, Stevenage, 1994, p. 101).
5. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy
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