Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3282705
Reference31 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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4. Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
5. Improved quantum efficiency in nonpolar (112̄0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
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