Polarization of emission from non-polar III-nitride quantum wells: the influence of confinement
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/47/i=4/a=045101/pdf
Reference37 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes
3. Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
4. Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
5. High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
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1. Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range;Journal of Crystal Growth;2016-03
2. Optical polarization characteristics of m-plane GaN/AlGaN quantum well structures grown on m-plane SiC substrate;Solid State Communications;2015-12
3. Electronic Structure of Polar and Semipolar (112¯2)-Oriented Nitride Dot-in-a-Well Systems;Physical Review Applied;2015-06-30
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