Spectroscopic study of the vacuum ultraviolet windowless photodissociation of silicon hydrides for silicon‐based film deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361150
Reference35 articles.
1. Quantitative photoexcitation study of SiH4in vacuum ultraviolet
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3. Quantitative photoexcitation study of SiH4in vacuum ultraviolet
4. Quantitative photoexcitation study of SiH4in vacuum ultraviolet
5. Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor
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1. Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-09
2. Hard-Mask-Through UV-Light-Induced Damage to Low-kFilm during Plasma Process for Dual Damascene;Japanese Journal of Applied Physics;2010-04-20
3. Matrix Isolation Infrared Observation of HxSi(N2)y (x = 0, 1, 2 and y = 1, 2) Transient Species Using a 121-nm Vacuum Ultraviolet Photolysis Source;The Journal of Physical Chemistry A;2008-02-28
4. Raman investigation of submicro-grained Si films obtained by incoherent UV photo-CVD of silicon hydrides;Applied Physics A: Materials Science & Processing;1998-08-01
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