Characterization of epitaxial layers by the depth dependence of boron diffusivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107533
Reference7 articles.
1. Positron beam defect profiling of silicon epitaxial layers
2. Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition
3. Low‐temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure
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