Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126201
Reference11 articles.
1. Synergetic effects in annealing and low energy ion bombardment of Si(100) surfaces
2. Damage-free cleaning of Si(001) using glancing-angle ion bombardment
3. Reactions of point defects and dopant atoms in silicon
4. Damage profiling of Ar+ sputtered Si(100) surface by medium energy ion scattering spectroscopy
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1. Fractal topography of surfaces exposed to gas-cluster ion beams and modeling simulations;Journal of Applied Physics;2004-05-15
2. Etching of Silicon Native Oxide Using Ultraslow Multicharged Ar[sup q+] Ions;Journal of The Electrochemical Society;2004
3. DLTS of low-energy hydrogen ion implanted n-Si;Physica B: Condensed Matter;2003-12
4. Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles;Journal of Physics: Condensed Matter;2003-09-19
5. SIMS: from research to production control;Surface and Interface Analysis;2003
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