Damage profiling of Ar+ sputtered Si(100) surface by medium energy ion scattering spectroscopy-Reference-Cited by-同舟云学术

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Damage profiling of Ar+ sputtered Si(100) surface by medium energy ion scattering spectroscopy

Published:1996-07 Issue: Volume:100-101 Page:97-101
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee J.C.,Jeong C.S.,Kang H.J.,Kim H.K.,Moon D.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Damage profiling of Ar+ -irradiated Si(100) and GaAs(100) by medium energy ion scattering

2. Radiation damage in silicon (001) due to low energy (60–510 eV) argon ion bombardment

3. Build-up and annealing of damage produced by low-energy argon ions at Si(lll) surface

4. Residual damage to an atomically cleaned low‐temperature‐annealed Si(100) surface

5. Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions

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1. Characterization of Planar Defects in Annealed SiGe/Si Heterostructure;Korean Journal of Materials Research;2009-12-27

2. Incident angle and energy dependences of low-energy Ar+ ion sputtering of GaAs/AlAs multilayered system;Surface and Interface Analysis;2009-04-27

3. Experimental and theoretical determination of the mixing efficiency at low-energy Ar+ bombardment: case study of the Cu/Co system;Surface and Interface Analysis;2007

4. Dependence of depth resolution on primary energy of low-energy Ar+ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice;Surface and Interface Analysis;2006

5. Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low-energy ions;Surface and Interface Analysis;2005

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