Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2535899
Reference7 articles.
1. High transconductance-normally-off GaN MODFETs
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3. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
4. Characteristics of semi-insulating, Fe-doped GaN substrates
5. Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
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