Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals-Reference-Cited by-同舟云学术

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

Published:2014-04-28 Issue:16 Volume:115 Page:163707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nonaka Yusuke,Kurosawa Yoichi,Komatsu Yoshihiro,Ishihara Noritaka,Oota Masashi,Nakashima Motoki,Hirohashi Takuya,Takahashi Masahiro,Yamazaki Shunpei,Obonai Toshimitsu,Hosaka Yasuharu,Koezuka Junichi,Yamauchi Jun

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4873638

Reference36 articles.

1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

2. The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C

3. Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. 15.1: Research, Development, and Application of Crystalline Oxide Semiconductor

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