Recurring polyhedral motifs in the amorphous indium gallium zinc oxide network-Reference-Cited by-同舟云学术

Recurring polyhedral motifs in the amorphous indium gallium zinc oxide network

Published:2017-02 Issue:2 Volume:214 Page:1600471
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Divya¹²,Prasad Rajendra³, Deepak¹²

Affiliation:

1. Department of Materials Science and Engineering; Indian Institute of Technology; Kanpur 208016 India

2. National Center for Flexible Electronics; Indian Institute of Technology; Kanpur 208016 India

3. Department of Physics; Indian Institute of Technology; Kanpur 208016 India

Funder

Department of Science and Technology, Government of Kerala

Council of Scientific & Industrial Research (CSIR)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4;Takagi;Thin Solid Films,2005

3. Amorphous oxide semiconductors for high-performance flexible thin-film transistors;Nomura;Jpn. J. Appl. Phys,2006

4. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater,2010

5. J. K. Jeong J. H. Jeong J. H. Choi J. S. Im S. H. Kim H. W. Yang K. N. Kang K. S. Kim T. K. Ahn H. J. Chung M. Kim B. S. Gu J. S. Park Y. G. Mo H. D. Kim H. K. Chung 2008

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic Structure and Dynamic Study in Amorphous InGaZnO Focusing on Oxygen-Centered Complex;The Journal of Physical Chemistry C;2024-07-18

2. Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors;Journal of Applied Physics;2019-09-28

3. Probing the Unique Role of Gallium in Amorphous Oxide Semiconductors through Structure–Property Relationships;Advanced Electronic Materials;2017-09

4. Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis;Journal of the American Chemical Society;2017-04-03