Subject
General Physics and Astronomy,General Materials Science
Reference23 articles.
1. A review on the recent developments of solution processes for oxide thin film transistors;Ahn;Semicond. Sci. Technol.,2015
2. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress;Niang;Appl. Phys. Lett.,2016
3. Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors;Oh;Appl. Phys. Lett.,2016
4. The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors;Su;Appl. Phys. Lett.,2017
5. A direct method to extract transient sub-gap density of state (DOS) based on dual gate pulse spectroscopy;Dai;Sci. Rep.,2016
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