AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1579132
Reference10 articles.
1. Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
2. Characteristics of a distributed Bragg reflector for the visible‐light spectral region using InGaAlP and GaAs: Comparison of transparent‐ and loss‐type structures
3. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes
4. Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers
5. Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
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3. InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding;Optical Materials Express;2018-01-18
4. Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots;Nanoscale Research Letters;2015-09-15
5. P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer;Optics Express;2014-11-14
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